EC21107: Semiconductor Devices
| EC21107 | |||||||||||||||||||||||||||||
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| Course name | Semiconductor Devices | ||||||||||||||||||||||||||||
| Offered by | Electronics & Electrical Communication Engineering | ||||||||||||||||||||||||||||
| Credits | 4 | ||||||||||||||||||||||||||||
| L-T-P | 3-1-0 | ||||||||||||||||||||||||||||
| Professor(s) | Vivek Dixit Mrigank Sharad | ||||||||||||||||||||||||||||
| Previous Year Grade Distribution | |||||||||||||||||||||||||||||
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| Semester | Autumn | ||||||||||||||||||||||||||||
Syllabus[edit | edit source]
Syllabus mentioned in ERP[edit | edit source]
Pre-requisites: NoneSemiconductor fundamentals, crystal structure, Fermi level, energy-band diagram, intrinsic and extrinsic semiconductor, carrier concentration, scattering and drift of electrons and holes, drift current , diffusion mechanism, generation and recombination and injection of carriers, transient response, basic governing equations in semiconductor, physical description of p-n junction, transport equations, current â voltage characteristics and temperature dependence, tunneling current, small signal ac analysis.BJT equivalent circuits and modeling frequency response of transistors, pnpn diode, SCR, MOS structure, flat-band threshold voltages, MOS static characteristics, small signal parameters and equivalent circuit, charge â sheet model, strong, moderate and weak inversion, short channel effects, scaling laws of MOS transistors, LDD MOSFET, NMOS and CMOS IC technology, CMOS latch âÂÂup phenomenon, ideal Schottky barrier, current voltage characteristics, MIS diode heterojunctions devices, optical absorption in a semiconductor, photovoltaic effect, solar cell, photoconductors, PIN photodiode, avalanche photodiode, LED, semiconductor lasers; negative conductance in semiconductors, transit time devices, IMPATT, Gunn device, BiCMOS devices.
Concepts taught in class[edit | edit source]
Student Opinion[edit | edit source]
The course delivery and content differs from Professor to Professor.
For example from 2016-17 Prof Mrigank Sharad stressed on Quantum Mechanics and didnt touch BJTs, whereas Prof Vivek Dixit placed more stress on semiconductor material properties, diodes, BJTs and MOSFETs . Evaluation varies as well.
It would be advisable to strictly follow syllabus and better to practise numericals from the Donald Neamen book (link given below in Class room Resources).For videos see additional resources.
How to Crack the Paper[edit | edit source]
Classroom resources[edit | edit source]
Textbook: Solid State Electronics (Streetman, Banerjee)-http://ebookscart.com/download-solid-state-electronic-devices-global-edition-by-ben-streetman-et-al-pdf-free/
Semiconductor Physics and Devices (Donald A Neamen)-http://www.fulviofrisone.com/attachments/article/403/Semiconductor%20Physics%20And%20Devices%20-%20Donald%20Neamen.pdf
Additional Resources[edit | edit source]
Caltech Video Playlist : https://www.youtube.com/playlist?list=PLc7Gz02Znph8d2777p1PUrfPL-8nfj8oZ
Time Table[edit | edit source]
| Day | 8:00-8:55 am | 9:00-9:55 am | 10:00-10:55 am | 11:00-11:55 am | 12:00-12:55 pm | 2:00-2:55 pm | 3:00-3:55 pm | 4:00-4:55 pm | 5:00-5:55 pm | |
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| Monday | V2 | |||||||||
| Tuesday | V2 | V2 | ||||||||
| Wednesday | ||||||||||
| Thursday | V2 | |||||||||
| Friday |