EC29004: Devices Laboratory

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EC29004
Course name Devices Laboratory
Offered by Electronics & Electrical Communication Engineering
Credits 2
L-T-P 0-0-3
Previous Year Grade Distribution
37
54
15
3
1
2


EX A B C D P F
Semester {{{semester}}}


Syllabus[edit | edit source]

Syllabus mentioned in ERP[edit | edit source]

MODULES:

A. CHARACTERISATION LAB (ICSE LAB 3RD FLOOR ECE DEPT)

1. JFET Characterization 2. Diode Breakdown Characteristics 3. Capacitance âVoltage Characteristics of a PN Junction (Doping profile) 4. High frequency Characteristics of BJT. 5. SCR Characteristics. 6. Hall Effect.

B. TCAD SILVCO SIMULATION (CIC- DOE VLSI LAB)

C. FABRICATION LAB (VLSI AND MEMS LAB- GROUND FLOOR)

1 oral Viva and lab expt in characteristaion lab along with lab manual (partners)

1 lab manual (individual) in FABRICATION LAB

1 lab report (3 expts ) in Simulation lab

1 written mcq test (40 questions) final


Concepts taught in class[edit | edit source]

Student Opinion[edit | edit source]

How to Crack the Paper[edit | edit source]

Classroom resources[edit | edit source]

Additional Resources[edit | edit source]