EC60201: Semiconductor Device Modeling
| EC60201 | |||||||||||||||||||||||||
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| Course name | Semiconductor Device Modeling | ||||||||||||||||||||||||
| Offered by | Electronics & Electrical Communication Engineering | ||||||||||||||||||||||||
| Credits | 4 | ||||||||||||||||||||||||
| L-T-P | 3-1-0 | ||||||||||||||||||||||||
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| Semester | Autumn | ||||||||||||||||||||||||
Syllabus[edit | edit source]
Syllabus mentioned in ERP[edit | edit source]
Pre-requisites: EC21007Review of semiconductor physics: Quantum foundation, Carrier scattering, high field effects; P- N junction diode modeling: Static model, Large signal model and SPICE models; BJT modeling: Ebers â Moll, Static, large-signal, small- signal models. Gummel - Poon model. Temperature and area effects. Power BJT model, SPICE models, Limitations of GP model; Advanced Bipolar models: VBIC, HICUM and MEXTARM;MOS Transistors: LEVEL 1, LEVEL 2 ,LEVEL 3, BSIM, HISIMVEKV Models, Threshold voltage modeling. Punch through. Carrier velocity modeling. Short channel effects. Channel length modulation. Barrier lowering, Hot carrier effects. Mobility modeling, Model parameters; Analytical and Numerical modeling of BJT and MOS transistors: Introduction to variou
Concepts taught in class[edit | edit source]
Student Opinion[edit | edit source]
How to Crack the Paper[edit | edit source]
Classroom resources[edit | edit source]
Additional Resources[edit | edit source]
Time Table[edit | edit source]
| Day | 8:00-8:55 am | 9:00-9:55 am | 10:00-10:55 am | 11:00-11:55 am | 12:00-12:55 pm | 2:00-2:55 pm | 3:00-3:55 pm | 4:00-4:55 pm | 5:00-5:55 pm | |
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| Monday | A102 | |||||||||
| Tuesday | ||||||||||
| Wednesday | A102 | A102 | ||||||||
| Thursday | A102 | |||||||||
| Friday |