EC61415: Advanced Semiconductor Devices
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| EC61415 | |
|---|---|
| Course name | Advanced Semiconductor Devices |
| Offered by | Electronics & Electrical Communication Engineering |
| Credits | 3 |
| L-T-P | 3-0-0 |
| Previous Year Grade Distribution | |
| {{{grades}}} | |
| Semester | Spring |
Syllabus[edit | edit source]
Syllabus mentioned in ERP[edit | edit source]
Pre-requisites: EC21007Electronic properties and technologies: SiGe and Group III-V compound semiconductors; Advanced HBT Devices: SiGe, GaAs, InP, GaN; Advanced Field Effect Devices: Heterostructure Field Effect Transistors (HFETs), Modulation Doped Field Effect Transistors (MODFETs), High Electron Mobility Transistors (HEMTs); Resonant Tunneling Devices (RTDs); Single Electron Transistors (SETs); Strained layer supperlattices and quantum well devices; RF and digital applications; Noise Characteristics; HBT Modelling; Heterojunction device simulation
Concepts taught in class[edit | edit source]
Student Opinion[edit | edit source]
How to Crack the Paper[edit | edit source]
Classroom resources[edit | edit source]
Additional Resources[edit | edit source]
Time Table[edit | edit source]
| Day | 8:00-8:55 am | 9:00-9:55 am | 10:00-10:55 am | 11:00-11:55 am | 12:00-12:55 pm | 2:00-2:55 pm | 3:00-3:55 pm | 4:00-4:55 pm | 5:00-5:55 pm | |
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| Monday | F102 | F102 | ||||||||
| Tuesday | F102 | |||||||||
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| Friday |